• 专利标题:   Infrared and terahertz wide frequency band detector has drain electrode metal electrode layer covered on two ends of graphene heterojunction channel layer, and gate metal antenna electrode layer lead-out wire formed on insulating layer.
  • 专利号:   CN112216760-A
  • 发明人:   LAI W, YUAN H, ZHU Q
  • 专利权人:   UNIV HEFEI TECHNOLOGY
  • 国际专利分类:   H01L031/0224, H01L031/09, H01L031/109, H01L031/115, H01L031/18
  • 专利详细信息:   CN112216760-A 12 Jan 2021 H01L-031/09 202118 Pages: 13 Chinese
  • 申请详细信息:   CN112216760-A CN11131565 21 Oct 2020
  • 优先权号:   CN11131565

▎ 摘  要

NOVELTY - Infrared and terahertz wide frequency band detector (1) has a graphene heterojunction channel layer located on a substrate (2). A gate insulating layer is covered on the graphene heterojunction channel layer (3). A portion of a source electrode metal antenna electrode layer and a drain electrode metal electrode layer are covered on two ends of the graphene heterojunction channel layer. A gate metal antenna electrode layer lead-out wire is formed on a portion of the gate insulating layer (6). USE - Infrared and terahertz wide frequency band detector. ADVANTAGE - The detector combines antenna design and uses heterogeneous junction formed by graphene and two-dimensional material with excellent electrical characteristics, and improves absorptivity of detector to infrared and terahertz radiation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a mwthod for manufacturing method of a detector in infrared and terahertz broadband, which involves: (A) providing substrate layer; (B) transferring the graphene heterojunction channel layer to the substrate layer; (C) forming a source electrode and a drain electrode on the graphene heterojunction channel layer, and patterning to obtain a source metal antenna electrode layer and a drain metal electrode layer; and (D) sequentially forming and patterning gate insulating layer and a gate metal antenna electrode layer on the graphene heterojunction channel layer. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of infrared and terahertz wide frequency band detector. Detector (1) Substrate (2) Graphene heterojunction channel layer (3) Drain electrode layer (5) Gate insulating layer (6)