• 专利标题:   Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.
  • 专利号:   DE102021104839-A1, CN113355648-A, KR2021111695-A, US2021280420-A1, JP2021158347-A, TW202140834-A, SG10202101928-A, US11527407-B2
  • 发明人:   BHUYAN B J, LEONCINI A
  • 专利权人:   APPLIED MATERIALS INC, UNIV SINGAPORE NAT, UNIV SINGAPORE NAT, UNIV SINGAPORE NAT, APPLIED MATERIALS INC, APPLIED MATERIALS INC
  • 国际专利分类:   C01B032/186, C23C016/26, C23C016/44, C23C016/455, C23C016/46, C23C016/52, C23C016/56, H01J037/32, H01L021/02, H01L021/033, C23C016/50, C23C016/04, H01L021/314
  • 专利详细信息:   DE102021104839-A1 09 Sep 2021 C01B-032/186 202180 Pages: 19 German
  • 申请详细信息:   DE102021104839-A1 DE10104839 01 Mar 2021
  • 优先权号:   US807796

▎ 摘  要

NOVELTY - Forming a layer, comprises either: (a) exposing a substrate to an aromatic precursor in a processing chamber, (b) rinsing the aromatic precursor from the processing chamber, (c) heating the substrate at a temperature below 600 degrees C to polymerize the aromatic precursor and deposit a graphene hard mask layer on the substrate, and (d) rinsing the processing chamber; or (i) forming a flowable graphene hard mask layer on a substrate by exposing the substrate to an aromatic precursor, and (ii) exposing the substrate to a plasma. USE - The method is useful for forming a layer. ADVANTAGE - The method forms graphene hard mask layers at lower temperatures, and improves graph deposition processes. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for non-transitory computer readable storage medium comprising instructions which, when executed by a control of a processing chamber, cause the processing chamber to perform the following operations: exposing a substrate to an aromatic precursor in a processing chamber, rinsing the aromatic precursor from the processing chamber, heating the substrate to a temperature below 600 degrees C to polymerize the aromatic precursor and deposit a graphene hard mask layer on the substrate, and rinsing the processing chamber. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for forming a layer (Drawing includes non-English language text).