• 专利标题:   Activated expanded graphite oxide, useful in a monolayer graphene sheet and an electrode of an ultracapacitor, comprises a dopant comprising a non-metal e.g. nitrogen.
  • 专利号:   WO2015031841-A1, US2016254102-A1, US10037855-B2
  • 发明人:   RUOFF R S, ZHANG L L, STOLLER M D
  • 专利权人:   UNIV TEXAS SYSTEM, UNIV TEXAS SYSTEM
  • 国际专利分类:   C01B031/04, H01G011/00, H01M004/00, C23C016/26, H01G011/34, B82Y030/00, H01B001/04, H01G011/32, H01G011/36, H01G011/68, H01M004/583, H01M004/62, H01M004/86, H01M004/90
  • 专利详细信息:   WO2015031841-A1 05 Mar 2015 C01B-031/04 201518 Pages: 47 English
  • 申请详细信息:   WO2015031841-A1 WOUS053557 29 Aug 2014
  • 优先权号:   US872471P, US051350

▎ 摘  要

NOVELTY - Activated expanded graphite oxide comprises at least one dopant. USE - The activated expanded graphite oxide is useful in a monolayer graphene sheet and an electrode (all claimed) of an ultracapacitor. ADVANTAGE - The activated expanded graphite oxide exhibits increased capacitance relative to undoped activated microwave expanded graphite oxide and monolayer graphene. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) producing the activated expanded graphite oxide, comprising exposing a graphite oxide to at least one of microwave energy and/or thermal energy to provide an expanded graphite oxide, contacting the expanded graphite oxide with an activator, and heat treating the activated expanded graphite oxide in the presence of one or more gaseous or liquid sources of one or more dopant elements; (2) a monolayer graphene sheet comprising one or more dopant elements, where the graphene is produced by chemical vapor deposition, and the dopant atoms are incorporated into the planar molecular lattice of the graphene sheet; and (3) synthesizing graphene comprising one or more dopant elements, comprising loading a metal substrate into a chemical vapor deposition apparatus, heating the metal substrate to a temperature of 400-1400 degrees C, providing hydrogen gas while maintaining the temperature of the substrate, and providing a gaseous carbon source and at least one gaseous source of the dopant elements through the chemical vapor deposition apparatus while maintaining the temperature of the substrate.