▎ 摘　　要

NOVELTY - The FET has a substrate (1) that is provided with a first conductive region (2), a second conductive region (4) and a third conductive region (3). The second conductive region is located between the first conductive region and the third conductive region. The first conductive region and the third conductive region are all formed by a graphene doped with the first conductivity type. The second conductive region is formed by graphene doped with the second conductivity type. The p-type doping or n-type doping of the graphene adopts a lattice doping or adsorption doping method. USE - Graphene FET for use in integrated circuit (claimed). ADVANTAGE - The FET controls the formation and disappearance of the channel through the gate electrode voltage, and achieves a higher switching ratio and improves the gate control ability. The on-off of the logic circuit is realized and reducing the static power consumption of the logic circuit has a good application prospect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method for graphene FET. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural view of the graphene field effect tube. Substrate (1) First conductive region (2) Third conductive region (3) Second conductive region (4) Drain electrode (6)