▎ 摘　　要

NOVELTY - Producing graphene by plasma-enhanced chemical vapor deposition, comprises: providing a metal substrate (14) and a carbonaceous electrode; applying a potential between the metal substrate and the carbonaceous electrode; exciting a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thus forming a plasma; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species. USE - The method is useful for producing graphene by plasma-enhanced chemical vapor deposition. DETAILED DESCRIPTION - Producing graphene by plasma-enhanced chemical vapor deposition, comprises: providing a metal substrate and a carbonaceous electrode, where at least a portion of the metal substrate is located proximate to the carbonaceous electrode with a gap defined between them; applying a potential between the metal substrate and the carbonaceous electrode; exciting a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thus forming a plasma; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species. INDEPENDENT CLAIMS are also included for: (1) producing graphene by plasma-enhanced chemical vapor deposition, comprising providing a metal substrate and a carbonaceous electrode, where at least a portion of the metal substrate is located proximate to the carbonaceous electrode with a gap defined between them, conveying the metal substrate by the carbonaceous electrode via a reel-to-reel processing line between a pay-out reel (16) and a take-up reel (18), applying a potential between the metal substrate and the carbonaceous electrode via the reel-to-reel processing line, flowing a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thus forming a plasma upon exciting the plasma-forming gas, ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma, and growing graphene on the metal substrate from the reactive carbon species, while the metal substrate is being conveyed; and (2) a system (10) comprising a reaction chamber (12), a reel-to-reel processing line configured to convey a metal substrate within the reaction chamber between a pay-out reel and a take-up reel, a carbonaceous electrode housed within the reaction chamber and disposed proximate to a location through which the metal substrate is conveyed, where the carbonaceous electrode and the reel-to-reel processing line are electrically connected to apply a potential between the metal substrate and the carbonaceous electrode, and a gas inlet configured to flow a plasma-forming gas in a gap between the metal substrate and the carbonaceous electrode. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of systems for producing graphene by plasma-enhanced chemical vapor deposition. System (10) Reaction chamber (12) Metal substrate (14) Pay-out reel (16) Take-up reel (18)