▎ 摘　　要

NOVELTY - The resonator has a substrate formed with a groove that is matched with a bottom electrode layer. A constant temperature part of the bottom electrode layer is formed with an air cavity that is matched with a resonator device body. A smooth surface of the bottom electrode layer is formed with a piezoelectric layer that is matched with a top electrode layer. The top electrode layer is matched with a graphene sheet. The substrate is provided with a silicon substrate. The piezoelectric layer is formed with an aluminum nitride layer. Depth of the air cavity is about 200nm-3 um. USE - Piezoelectric thin film bulk acoustic wave resonator. ADVANTAGE - The resonator is simple in structure, and improves working precision of a chemical mechanical polishing device and electromechanical coupling coefficient property and sensitivity of a sensor, reduces grinding time consumption and increases Q-value. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a piezoelectric thin film bulk acoustic wave resonator manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a piezoelectric thin film bulk acoustic wave resonator.