▎ 摘　　要

NOVELTY - Controlled disulfide preparation method involves atmospheric pressure chemical vapor deposition method of two-dimensional tungsten disulfide on silicon dioxide/silicon substrate where the sulfur source is elemental sulfur, tungsten source is tungsten trioxide powder. USE - Controlled disulfide preparation method used for graphene in electronic devices. ADVANTAGE - Chemical vapor deposition improves growth without the vacuum, thus reducing the process cost.