▎ 摘　　要

NOVELTY - Graphene heat sink comprises a polyimide framework and a graphene substrate, the polyimide framework and the graphene substrate form a three-dimensional bridged micro-chain lock-shaped structure USE - The heat sink is useful in semiconductor assembly (claimed). ADVANTAGE - The heat sink has three-dimensional structure ultra-high vertical direction heat conduction coefficient and vertical thermal conductivity of more than 100 W/mK which is about 10 times of the current heat conducting film, and can withstand large elongation and folding deformation and external bending with high flexibility. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the graphene heat sink with three-dimensional structure and ultra-high vertical direction heat conduction coefficient in semiconductor assembly, comprises (a) soaking the polyimide framework into the graphene oxide dispersion liquid, maintaining for 15 minutes to form a composite film, and (b) carbonizing the composite film at 1200 degrees C for 2 hours, then introducing inert gas, heating to 2300 degrees C, graphitizing for 1 hour, cooling, then compacting at 30 MPa for 30 minutes to obtain graphene heat sink.