▎ 摘　　要

NOVELTY - The method involves providing a semiconductor lining, and forming a graphene on the semiconductor lining. A metal contact is formed on a graphene layer. A source is connected to a leakage electrode. An atom layer is deposited to grow boron nitride as a gate oxide medium. A gate electrode is arranged on the gate oxide medium. The source and leakage electrode are made of platinum, aluminum, gold, ruthenium, tin or tan. The gate electrode is made of platinum, aluminum, gold or palladium. USE - Gate oxide medium forming method for a graphene FET in a graphene apparatus. ADVANTAGE - The method enables avoiding mechanical peeling to form the boron nitride and easily controlling size and integrating to graphene apparatus integrated process. The method enables controlling structure and shortcoming of the boron nitride by controlling the atom layer depositing growing parameter. The method enables providing a graphene FET with high transport factor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating a gate oxide medium forming method.