▎ 摘　　要

NOVELTY - Formation of patterned layer of material involves providing a substrate having layered structure containing base layer, support layer containing sub-units which are thermally insulated from each other within a plane of the support layer and thermally insulation layer having thermal conductivity lower than the support layer, selectively irradiating a selected portion of the support layer during deposition process, locally driving the deposition process in the selected portion and forming a layer of deposited material in a pattern defined by the selected portion. USE - Formation of patterned layer of material used in manufacture of semiconductor device (claimed). ADVANTAGE - The method forms a patterned layer of material without using a resist, thus providing flexibility and processing efficiency. The method allows two-dimensional materials to be grown in-situ, thus increasing the throughput of the deposition process and increasing the speed of deposition, and hence increasing the quality of the deposited layers. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for formation of semiconductor device using the method for forming patterned layer of material to form at least one layer in the device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of apparatus for forming pattern layer of material. Apparatus (60) Irradiation system (182) Lithographic apparatus (LA) Substrate (W)