• 专利标题:   Field control light emitting device for use in semiconductor, comprises an active layer providing a channel region, a first graphene layer which has a first region overlapping on a first end of the active layer.
  • 专利号:   KR2020137790-A
  • 发明人:   LEE G H, KWON J
  • 专利权人:   UNIV YONSEI IND ACADEMIC COOP FOUND
  • 国际专利分类:   H05B033/10, H05B033/14
  • 专利详细信息:   KR2020137790-A 09 Dec 2020 H05B-033/10 202002 Pages: 23
  • 申请详细信息:   KR2020137790-A KR064687 31 May 2019
  • 优先权号:   KR064687

▎ 摘  要

NOVELTY - The device (300) comprises an active layer providing a channel region. A first graphene layer which has a first region overlapping on a first end of the active layer and an extension extending from the first region toward the outside of the active layer, and a first source/drain electrode including a first metal electrode (104) coupled to the extended section (105) of the first graphene layer. A second graphene layer which has a second region overlapping on a second end of the active layer and an extension extending from the second region toward the outside of the active layer, and a second source/drain electrode including a second metal electrode coupled to the extended section of the second graphene layer. USE - Field control light emitting device for use in semiconductor. ADVANTAGE - The luminous efficiency is high, and flexibility and transparency due to the graphene electrode are achieved. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the field control light emitting device for use in semiconductor. Control Gate Electrode (102) First metal electrode (104) Extended section (105) Second Metal Electrode (204) Device (300)