• 专利标题:   Heteroepitaxial diamond comprises heterogeneous substrate, graphene flexible layer used as flexible intermediate layer for growing diamonds on heterogeneous substrate, and diamond layer which is epitaxially grown on diamond layer.
  • 专利号:   CN106835274-A
  • 发明人:   YU W, JIN P, ZHANG Y, WANG Z
  • 专利权人:   INST SEMICONDUCTORS CHINESE ACAD SCI
  • 国际专利分类:   C30B025/18, C30B029/04
  • 专利详细信息:   CN106835274-A 13 Jun 2017 C30B-029/04 201758 Pages: 11 Chinese
  • 申请详细信息:   CN106835274-A CN10062928 23 Jan 2017
  • 优先权号:   CN10062928

▎ 摘  要

NOVELTY - A heteroepitaxial diamond comprises a heterogeneous substrate, a graphene flexible layer formed on the substrate, and a diamond layer which is epitaxially grown on the diamond layer. The graphene flexible layer is used as a flexible intermediate layer for growing diamonds on the heterogeneous substrate. USE - Heteroepitaxial diamond (claimed). ADVANTAGE - The heteroepitaxial diamond has suppressed reduction in quality due to lattice mismatch between the substrate and diamond. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of heteroepitaxial diamond.