▎ 摘　　要

NOVELTY - A resistive memory device e.g. resistive random-access memory device comprises a layer (A) comprising indium tin oxide/cupric oxide/graphene oxide and 1% silver/cupric oxide/aluminum, or aluminum/cupric oxide/graphene oxide and 1% silver/cupric oxide/aluminum, or indium tin oxide/graphene oxide and 1% silver/aluminum, or indium tin oxide/cupric oxide/graphene oxide and 0.1% silver/cupric oxide/aluminum, or indium tin oxide/graphene oxide and 0.1% silver/aluminum, or indium tin oxide/cupric oxide/graphene oxide and 1% copper/cupric oxide/aluminum, indium tin oxide/cupric oxide/graphene oxide and 1% iron/cupric oxide/aluminum, or indium tin oxide/graphene oxide and 1% copper/aluminum, and having a thickness of 20-50 nm, and electrodes comprising aluminum. USE - Resistive memory device e.g. resistive random-access memory device is used for electronic device and microelectronic device. ADVANTAGE - The resistive memory device consumes less power, and can be manufactured by economical method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the resistive memory device.