• 专利标题:   Method for manufacturing LED structure, involves directly synthesizing graphene layer on substrate without transferring , synthesizing LED layer on graphene layer, and directly synthesizing graphene layer on substrate.
  • 专利号:   WO2022215891-A1, KR2022138780-A
  • 发明人:   YI G, LEE S, YOO D, LEE C, MUHAMMAD S A, LIM C, LEE S J, GU L C, ABBAS M S, LIM C R
  • 专利权人:   DIFLAT CO LTD, UNIV SUNGKYUNKWAN RES BUSINESS FOUND, UNIV SEOUL NAT R DB FOUND
  • 国际专利分类:   H01L033/00, H01L033/06, H01L033/44
  • 专利详细信息:   WO2022215891-A1 13 Oct 2022 H01L-033/00 202285 Pages: 31
  • 申请详细信息:   WO2022215891-A1 WOKR003701 16 Mar 2022
  • 优先权号:   KR044683, KR119256

▎ 摘  要

NOVELTY - The method involves directly synthesizing a graphene layer on a substrate without transferring; and synthesizing an LED layer on the graphene layer, directly synthesizing the graphene layer on the substrate is a step of injecting vapor into a chamber in a vacuum state including the substrate and a copper substrate. USE - Method for manufacturing an LED structure (claimed). ADVANTAGE - The method enables providing an LED chip by easily separating a LED layer at low cost without an expensive process such as laser separation and a high-quality LED layer can be deposited without cracks and ensuring reusable, economical and environmentally friendly. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the method for manufacturing an LED structure (Drawing includes non-English language text).