▎ 摘　　要

NOVELTY - FET comprises a source electrode (300) and a drain electrode (400) disposed on a substrate (100), and a channel layer (500) comprising a phosphorus-doped graphene. The channel layer is electrically connected to the source electrode and the drain electrode. USE - FET such as P-type semiconductor channel transistor and an N-type semiconductor channel transistor. ADVANTAGE - The FET is stable in the air, and exhibits excellent N-type semiconductor characteristics. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a method-I for producing the FET, comprising forming the source electrode and the drain electrode on the substrate, and forming the channel layer including a phosphorus-doped graphene; (2) a method-II for preparing the phosphorus-doped graphene, comprising injecting a precursor including a phosphorus compound into a graphene material, where the phosphorus compound is in a gas phase, a liquid phase, or a state of being dissolved in a solvent, and heating the precursor-injected graphene material; and (3) the phosphorus-doped graphene prepared by the method-II. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a FET. Substrate (100) Source electrode (300) Drain electrode (400) Graphene channel layer (500) Phosphorus doping. (600)