• 专利标题:   Optical semiconductor switch based on graphene film useful for interfering and destroying unmanned aerial vehicle, missile and other electronic equipment, comprises e.g. semiconductor substrate provided with grid structure, transition layer, graphene film and anode arranged on substrate in sequence.
  • 专利号:   CN114267749-A, CN114267749-B
  • 发明人:   LI J, LI W
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   H01L031/112, H01L031/18
  • 专利详细信息:   CN114267749-A 01 Apr 2022 H01L-031/112 202247 Chinese
  • 申请详细信息:   CN114267749-A CN11586363 22 Dec 2021
  • 优先权号:   CN11586363

▎ 摘  要

NOVELTY - Optical semiconductor switch based on graphene film comprises a semiconductor substrate (1) with a grid structure, a first transition layer (2), a first graphene film (3) and a cathode (4), which is orderly arranged on the semiconductor substrate, a second transition layer (5), a second graphene film and an anode, which are arranged on the semiconductor substrate in sequence. The semiconductor substrate is prepared by gallium arsenide or silicon carbide. The first transition layer and the second transition layer are made of one of platinum or palladium. The cathode and the anode are made of gold-plated copper. USE - The optical semiconductor switch based on graphene film is useful for interfering and destroying unmanned aerial vehicle, missile and other electronic equipment. ADVANTAGE - The optical semiconductor switch: improve the performance, improve the electrode and the transition layer, ohmic contact gallium arsenide/silicon carbide, pressure resistance and heat dissipation characteristics, ensure that the switch speed is faster, higher pressure resistance, broadens the bandwidth of the electromagnetic wave generated by the light guide opening semiconductor, the power density is higher to withstand voltage can reach more than 20 kilovolts, the service life is more than ten thousand times, and the service lifetime is only thousand times, obtains electric field by using front and back electrodes on the semiconductor substrate is not only on the surface, which avoids the damage of the switch caused by easy ignition of the electrode, uses three-dimensional grid structure to make the generated light current pass through in the fixed channel (current channel). DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the anode and cathode of the optical semiconductor switch based on graphene set on the opposite side of the layered structure. (Drawing includes non-English language text). Semiconductor substrate (1) First transition layer (2) First graphene film (3) Cathode (4) Second transition layer (5)