▎ 摘　　要

NOVELTY - The device (10) has a semiconductor body (100) comprising a first main surface (101), a second main surface (102) opposite to the first main surface and a transistor cell array (610) provided with a set of transistor cells. A first load electrode is placed over the first main surface, where the first load electrode is electrically connected to the set of transistor cells. A second load electrode is placed over the second main surface, where the second load electrode is electrically connected to the set of transistor cells. The transistor cells comprise a control electrode provided with carbon, where the carbon comprises allotropes single-layered graphene, double-layered graphene, multi-layered graphene, graphenic-like carbon or carbon nanotubes. The carbon of the control electrode adjoins a dielectric opposite to a channel region, where the control electrode comprises a gate electrode. USE - Discrete or vertical power transistor device e.g. insulated gate FET (IGFET) such as metal oxide semiconductor FET (MOSFET) and insulated gate bipolar transistor (IGBT), for an integrated circuit. ADVANTAGE - The device improves electric device characteristics and reduces device manufacturing costs by shrinking device geometries. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a transistor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of transistor devices including a trench gate electrode comprising carbon and a shielding region. Discrete or vertical power transistor device (10) Semiconductor body (100) First main surface (101) Second main surface (102) Transistor cell array (610)