▎ 摘　　要

NOVELTY - The method comprises growing a pinned layer on a substrate, perpendicularly growing nanowires on a graphene layer, separating the pinned layer from the substrate, and forming a covalently bonded material on the pinned layer. The nanowires are not interconnected with each other. The substrate comprises a semiconductor material. The method further comprises depositing a growth layer on the substrate, and removing the growth layer from the substrate using wet etching process. The pinned layer is separated by dissolving in water. USE - The method is useful for manufacturing a nanowire-graphene structure that is useful in an electric device (all claimed), an optical device, a thermoelectric device, a piezoelectric device, a photovoltaic device, capacitors and sensors. ADVANTAGE - The method is capable of manufacturing the nanowire-graphene structure without the need of a separate substrate. DETAILED DESCRIPTION - The method comprises growing a pinned layer on a substrate, perpendicularly growing nanowires on a graphene layer, separating the pinned layer from the substrate, and forming a covalently bonded material on the pinned layer. The nanowires are not interconnected with each other. The substrate comprises a semiconductor material. The method further comprises depositing a growth layer on the substrate, and removing the growth layer from the substrate using wet etching process. The pinned layer is separated by dissolving in water. The step of separating the pinned layer from the substrate comprises separating the graphene layer by applying voltage. The growing step is performed using an electrochemical deposition process.