▎ 摘　　要

NOVELTY - The detector has an N-type germanium substrate (1) located in a base area of the detector. An upper surface of the N-type germanium substrate is coated with an insulation layer (2). An N-type germanium nano cone array (3) is arranged perpendicular to the upper surface of the N-type germanium substrate. A P-type graphene film (4) is coated with an indium-tin oxide nano-particle (5). A lead-out electrode (6) i.e. silver electrode, is connected with the P-type graphene film and the N-type germanium substrate to form an ohmic contact. USE - P-type or N-type germanium graphene nano cone array Schottky infrared photoelectric detector. ADVANTAGE - The detector is simple to use, and has high light absorption capability and high photoelectric conversion efficiency. The detector improves light responding speed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a P-type or N-type germanium graphene nano cone array Schottky infrared photoelectric detector preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows an exploded perspective view of a P-type or N-type germanium graphene nano cone array Schottky infrared photoelectric detector. N-type germanium substrate (1) Insulation layer (2) N-type germanium nano cone array (3) P-type graphene film (4) Indium-tin oxide nano-particle (5) Lead-out electrode (6)