• 专利标题:   Method of producing graphene nano-ribon fet comprising form-building and functional graphene layers are first fabricated.
  • 专利号:   RU2400858-C1
  • 发明人:   GOLOD S V, MUTILIN S V, PRINTS V YA
  • 专利权人:   AS SIBE SEMICONDUCTORS PHYS INST
  • 国际专利分类:   H01J001/02, H01J001/62, H01J009/00
  • 专利详细信息:   RU2400858-C1 27 Sep 2010 201080 Pages: 0 Russian
  • 申请详细信息:   RU2400858-C1 RU141427 09 Nov 2009
  • 优先权号:   RU141427

▎ 摘  要

NOVELTY - Film flat components comprising form-building and functional graphene layers are first fabricated. Note here that said flat film elements are formed on substrate with required spatial arrangement over substrate area, primarily, regular arrangement. Then said flat film elements are separated from substrate and transformed into emitters with preset 3D spatial configuration. Transformation is performed by mechanical internal strains introduced into form-building layers either in producing film flat elements or in transformation, or in their separation and transformation in emitters. USE - Electrical engineering. ADVANTAGE - Uniform emission of electrons over emitters range, required electron emission density, its controllability, scalability of emitter sizes, optimised emitter outline shape and controlled emission current of every emitter. 16 cl, 9 dwg, 7 ex