▎ 摘　　要

NOVELTY - Preparation of large-size graphene/two-dimensional telluride heterojunction infrared photodetector involves providing semiconductor substrate, cleaning, depositing layer of carbon-dissolved and carbon-deposited metal on the surface of the substrate, depositing layer of metal copper on the deposited metal surface to obtain semiconductor/composite metal composite substrate, placing in chemical vapor deposition furnace chamber, heating at 600-700 degrees C for 1-5 minutes, introducing high purity argon gas, controlling pressure at 100-300 mbar, continuously heating at 950-1150 degrees C for 10-30 minutes, forming composite metal alloy on the surface of the semiconductor substrate, maintaining temperature for 10-30 minutes to grow graphene, growing graphene on the semiconductor substrate and metal interlayer, flattening the semiconductor substrate into quartz boat, adding molybdenum trioxide powder or indium(III) oxide powder, growing telluride on the semiconductor substrate and annealing. USE - The method is useful for preparation of large-size graphene/two-dimensional telluride heterojunction infrared photodetector. ADVANTAGE - The method enables preparation of large-size graphene/two-dimensional telluride heterojunction infrared photodetector with high quality, specific detection rate, response rate and detection speed and excellent stability and optical response. DETAILED DESCRIPTION - Preparation of large-size graphene/two-dimensional telluride heterojunction infrared photodetector involves providing semiconductor substrate, cleaning, removing impurities, drying the semiconductor substrate to obtain substrate, depositing layer of carbon-dissolved and carbon-deposited metal with thickness of 100-800 nm on the surface of the substrate, depositing layer of metal copper with thickness of 10-100 nm on the deposited metal surface to obtain semiconductor/composite metal composite substrate, placing the semiconductor/composite metal composite substrate in chemical vapor deposition furnace chamber, preprocessing, evacuating furnace cavity, rapidly heating at 600-700 degrees C for 1-5 minutes, introducing high purity argon gas, controlling pressure at 100-300 mbar, continuously heating at 950-1150 degrees C for 10-30 minutes, forming composite metal alloy on the surface of the semiconductor substrate, introducing high purity hydrogen and external carbon source gas, controlling pressure at 100-300 mbar, maintaining temperature for 10-30 minutes to grow graphene, continuously passing high purity argon gas, rapidly cooling to 600-700 degrees C, naturally cooling to room temperature, growing graphene on the semiconductor substrate and metal interlayer, removing the composite metal from the semiconductor/composite metal composite substrate, cleaning, drying to obtain semiconductor substrate, flattening the semiconductor substrate into quartz boat, adding molybdenum trioxide powder or indium(III) oxide powder, passing high purity argon gas and high purity hydrogen gas, controlling pressure at 100-300 mbar, heating at 600-800 degrees C, preferably 700-800 degrees C for 10-60 minutes, continuously passing high purity argon gas and high purity hydrogen gas, naturally cooling to room temperature, growing telluride on the semiconductor substrate, forming Van der Waals heterojunction with graphene to obtain graphene/two-dimensional telluride heterojunction substrate and annealing.