▎ 摘　　要

NOVELTY - The TFET (100) has specific electrode (120) that is formed on a substrate (110) includes extension portion (124). A semiconductor layer (140) is formed on extension portion and a graphene channel (150) is formed on semiconductor layer. The graphene channel is extended beyond an edge of one of semiconductor layers and extension portion to over area of substrate. Other electrode (160) that is formed on graphene channel is provided over area of substrate. A gate insulating layer (170) is formed on graphene channel and a gate electrode (180) is formed on gate insulating layer. USE - TFET for controlling current tunneling through semiconductor between graphene channel and electrode by applying gate voltage, used in electronic device. ADVANTAGE - The mobility of the carriers can be improved and the amount of the movement of the carriers can be increased. The flow of the carriers from other electrode to the substrate can be prevented. As the positive voltage is increasingly applied to the gate electrode, the easy movement of electrons can be facilitated and therefore the current in the TFET can be increased. As low driving voltage is provided, the driving speed can be improved by using high mobility of the graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of TFET including a graphene channel. TFET (100) Substrate (110) Electrodes (120,160) Extension portion of specific electrode (124) Semiconductor layer (140) Graphene channel (150) Gate insulating layer (170) Gate electrode (180)