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  • 专利标题:   Method for epitaxially growing graphene on silicon carbide wafer involves processing silicon carbide wafer with hydrogen and silane to remove oxide produced on wafer surface, and supplying argon.
  • 专利号:   CN102433586-A
  • 发明人:   LEI T, WANG D, TANG X, LEI J, WANG Y, ZHANG Y, WANG H
  • 专利权人:   UNIV XIDIAN
  • 国际专利分类:   C23C016/02, C23C016/26, C30B025/02, C30B025/18, C30B029/20
  • 专利详细信息:   CN102433586-A 02 May 2012 C30B-025/02 201236 Pages: 7 Chinese
  • 申请详细信息:   CN102433586-A CN10293632 02 Oct 2011
  • 优先权号:   CN10293632

▎ 摘　　要

NOVELTY - A 4H/6H silicon carbide wafer is cleaned and etched with hydrogen at 1550-1650 degrees C. The temperature of the wafer is reduced to 950-1050 degrees C and further to 840-860 degrees C, and silane is supplied in order to remove the oxide generated on the surface of the substrate. Argon is further supplied to the substrate at 80-120 degrees C and graphene is epitaxially grown on the surface. USE - Method for epitaxially growing graphene on silicon carbide wafer. ADVANTAGE - The graphene having large and uniform area is epitaxially grown.