▎ 摘　　要

NOVELTY - The electronic device (100) has a substrate (110) and a gate electrode (150) that is formed on the substrate. A ferroelectric layer (140) is formed between the substrate and the gate electrode. A carbon layer (130) is formed between the substrate and the ferroelectric layer. The carbon layer has an sp2 bonding structure. The substrate includes a channel element in the substrate at a location corresponding to the gate electrode and also includes a source (121) and a drain (122) at both sides of the channel element. The carbon layer includes nanocrystalline graphene including nano-sized crystals. The nanocrystalline graphene contains 1 atomic percent (at %) to 20 at % of hydrogen. USE - Electronic device e.g. silicon based logic device or memory device. ADVANTAGE - The current leakage and formation of an undesired silicon Si oxide layer or silicide are prevented. The carbon layer having an sp2 bonding structure screens a non-uniform electric potential due to a multi-domain structure of the ferroelectric layer and thus increases uniformity in characteristics of the electronic device. The insulating layer serves to suppress or prevent electrical leakage and also be used for capacitance matching in a gate stack structure. The carbon layer having an sp2 bonding structure has a small thickness of about 1 nm, hence the total thickness of the electronic device is reduced, thus the diffusion limitation and prevention effect is achievable. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an electronic device. Electronic device (100) Substrate (110) Source (121) Drain (122) Carbon layer (130) Ferroelectric layer (140) Gate electrode (150)