• 专利标题:   Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.
  • 专利号:   US2012267041-A1, KR2012119789-A, US9023221-B2, KR1813172-B1
  • 发明人:   WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   B32B037/02, C01B031/02, B32B018/00, C23C016/26, H01B001/04, B44C001/22, B82Y030/00, B82Y040/00, C01B031/04, H01L021/027
  • 专利详细信息:   US2012267041-A1 25 Oct 2012 C01B-031/02 201274 Pages: 15 English
  • 申请详细信息:   US2012267041-A1 US451775 20 Apr 2012
  • 优先权号:   KR037983

▎ 摘  要

NOVELTY - Forming (M1) a multi-layer graphene involves: forming a stack of a graphitizing metal catalyst layer and graphene by repeatedly performing a cycle of first forming the graphitizing metal catalyst layer on a substrate, and then forming the graphene on the graphitizing metal catalyst layer; and removing the graphitizing metal catalyst layer. USE - For forming a multi-layer graphene (claimed) which is used in various display devices, transparent electrodes, wiring, and/or transistors. ADVANTAGE - The present method produces graphene layer having a dense structure and uniform arrangement state. By using the present method, the multi-layer graphene may be more easily formed compared to a multi-layer graphene that is formed by repeatedly performing a transferring process. Also, the residue may not remain, and thus, the uniformity of graphene may be improved. Accordingly, defects of a final multi-layer graphene may be minimized or reduced, and also, the transmittance and conductivity of graphene may be improved. By using the present method, high-density graphene may be efficiently formed and the number of layers that constitute graphene may be easily controllable. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) forming (M2) a multi-layer graphene involving forming a stack of a graphitizing metal catalyst layer and graphene by repeatedly performing a cycle of first forming the graphitizing metal catalyst layer over a first substrate, and then forming the graphene on the graphitizing metal catalyst layer; forming a polymer support on the graphene; separating the stack of the graphitizing metal catalyst layer and the graphene and the polymer support from the first substrate; removing the graphitizing metal catalyst layer to form a stack of the graphene and the polymer support; transferring the stack of the graphene and the polymer support onto a second substrate; and removing the polymer support; (2) forming (M3) a multi-layer graphene involving forming a block layer on a substrate; patterning the block layer to form a patterned block layer; forming a stack of a graphitizing metal catalyst layer and graphene by repeatedly performing a cycle of first forming the graphitizing metal catalyst layer over the patterned block layer and then forming the graphene on the graphitizing metal catalyst layer; removing the patterned block layer; and removing the graphitizing metal catalyst layer; (3) forming (M4) a patterned multi-layer graphene involving forming a block layer on a first substrate; patterning the block layer to form a patterned block layer; forming a stack of a graphitizing metal catalyst layer and graphene by repeatedly performing a cycle of first forming the graphitizing metal catalyst layer over the first substrate including the patterned block layer formed thereon and then forming the graphene on the graphitizing metal catalyst layer; removing the patterned block layer; forming a polymer support on the graphene; separating the stack of the graphitizing metal catalyst layer and the graphene and the polymer support from the first substrate; removing the graphitizing metal catalyst layer; transferring the stack of the graphene and the polymer support onto a second substrate; and removing the polymer support; and (4) forming (M5) a multi-layer graphene involving placing a substrate into a process chamber, where the substrate includes a graphitizing metal catalyst layer formed on it; forming a graphene stack structure on the graphitizing metal catalyst layer by simultaneously providing a vaporous carbon supplier to the process chamber and heat treating the graphitizing metal catalyst layer; and removing the graphitizing metal catalyst layer.