• 专利标题:   Producing an array of single-crystal graphene islands, to make e.g. transistor, comprises e.g. providing substrate, cleaning substrate surface, spin-coating poly(methyl methacrylate) layer on the surface, curing, and performing lithography.
  • 专利号:   US2012088039-A1, WO2012051182-A2, WO2012051182-A3, US8597738-B2
  • 发明人:   YU Q, PEI S
  • 专利权人:   UNIV HOUSTON SYSTEM, YU Q, PEI S
  • 国际专利分类:   C23C014/30, B82B003/00, C01B031/02, C23C016/26, C30B029/02
  • 专利详细信息:   US2012088039-A1 12 Apr 2012 C23C-014/30 201226 Pages: 13 English
  • 申请详细信息:   US2012088039-A1 US270766 11 Oct 2011
  • 优先权号:   US391866P, US270766

▎ 摘  要

NOVELTY - Method (I) for producing an array of single-crystal graphene islands, comprises: (a) providing a substrate comprising material having low carbon dissolvability; (b) cleaning a surface of substrate; (c) spin-coating a layer of poly(methyl methacrylate) (PMMA) onto the surface; (d) curing the PMMA layer; (e) performing lithography on PMMA layer to fix a regular array of PMMA seeds at predetermined locations on the surface; (f) removing a portion of PMMA layer using a solvent; and (g) performing chemical vapor deposition (CVD) on the substrate. USE - The methods are useful for producing an array of single-crystal graphene islands (claimed), which are useful in making devices including transistors and other semiconductor devices. ADVANTAGE - The methods: provide the array of single-crystal graphene islands having small size and regular and uniformed thickness on the substrate, thus facilitating scalable fabrication of single crystal graphene devices having increased performance and desired properties; avoid formation of domain boundaries, thus improving the mobility and quality of graphene; and allow the growth of large graphene single crystals on polycrystalline substrates. DETAILED DESCRIPTION - Producing an array of single-crystal graphene islands, comprises: (a) providing a substrate comprising a material having low carbon dissolvability; (b) cleaning a surface of the substrate; (c) spin-coating a layer of poly(methyl methacrylate) (PMMA) onto the surface; (d) curing the PMMA layer; (e) performing lithography on the PMMA layer to fix a regular array of PMMA seeds at predetermined locations on the surface; (f) removing a portion of PMMA layer using a solvent, where the portion comprises substantially all PMMA other than the regular array of PMMA seeds; and (g) performing chemical vapor deposition (CVD) on the substrate, where many PMMA seeds serves as nucleation sites to produce many graphene islands at the predetermined locations, and a majority of the graphene islands comprises single-crystal graphene islands. INDEPENDENT CLAIMS are also included for a method (II) for producing the array of single-crystal graphene islands, comprising: either the steps (a) and (b) as above per se, (c1) fabricating a regular array of graphite micropillars on a highly oriented pyrolytic graphite surface, (d1) transferring many graphite seeds from the array of graphite micropillars onto the surface at predetermined locations, and (e1) performing CVD on the substrate, where the graphite seeds serves as nucleation sites to produce many graphene islands at the predetermined locations; or the steps (a) and (b) as above per se, (d2) printing an array of carbon-containing nanodots onto the surface, where the nanodots comprise seeds for graphene growth, and the step (e1) as above per se.