▎ 摘　　要

NOVELTY - The structure has an upper layer metal interconnection and a lower layer metal interconnection that are connected with a metal through a hole. Single layer or multi-layer graphene is arranged on a surface of the upper layer metal interconnection. The lower layer metal interconnection is made of tungsten material or nickeltungstenphosphorus, coppersiliconnitrogen, cobalttungstenphosphorus coating and copper, nickel, copper alloy or nickel alloy material. The upper metal interconnection layer is made of copper, nickel, copper alloy or nickel alloy material. USE - Integrated circuit metal interconnection structure. ADVANTAGE - The structure utilizes a graphene with molecule structure and electric property for coating a graphite layer on an upper layer metal connecting line, reaches electro migration resistance current density of graphite alkene to about 109 Ampere per square cm, and provides current by transferring the graphene coated on the surface of the metal lead so as to reduce growth rate of a metal hollow hole. The structure improves electro migration resistance ability and prevents growth of a crystal whisker so as to reduce the short circuit and metal wire in contact with air. The structure reduces or eliminates metal interconnection surface so as to improve reliability of integrated circuit interconnection. The structure has prolonged service life. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing an integrated circuit metal interconnection structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an integrated circuit metal interconnection structure.