▎ 摘　　要

NOVELTY - The detector has an n-type gallium nitride layer (3) whose two sides are provided with a p-type layer (4) and a nickel/gold electrode (6). The buffer layer (2) adopts a double-layer structure of a magnetron sputtering aluminum nitride layer and a graphene layer to improve the quality of the n-gallium nitride epitaxial layer. A side of the gallium selenium layer and the nickel/gold electrode are provided with a graphene layer (5). The other side above the gallium selenium layer is provided with the gold electrode (7), forms a Schottky contact with the gallium selenium layer. The graphene layer is separated from the nickel/gold electrode and the gold electrode respectively. The thickness of the magnetron sputtering aluminum nitride layer is 30-60 nm. The substrate (1) is a sapphire substrate or a silicon/silicon dioxide substrate or a silicon carbide substrate. The nickel/gold electrode is transferred to the other side of the gallium nitride layer. USE - Self- driven ultra-wide spectrum photo-detector based on n-gallium nitride-p-gallium selenium-graphene hetero-junction. ADVANTAGE - The self-driving performance of the photoelectric detector can be improved. The detectable spectrum range of the photoelectric detector can be expanded. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of self-driving ultra-wide spectrum photo-detector based on n-gallium nitride/p-gallium selenium/graphene hetero-junction. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the self- driven ultra-wide spectrum photo-detector based on n-gallium nitride-p-gallium selenium-graphene hetero-junction. Substrate (1) Buffer layer (2) N-type gallium nitride layer (3) P-type layer (4) Graphene layer (5) Nickel-gold electrode (6) Gold electrode (7)