▎ 摘　　要

NOVELTY - Preparing graphene based on copper film auxiliary annealing, comprises cleaning silicon substrate, heating to carbonizing temperature, charging propane, carbonizing substrate to obtain carbonizing layer, charging propane and silane to obtain 3C-silicon carbide heteroepitaxial films, reducing the temperature to obtain complete 3C-silicon carbide heteroepitaxial film, placing in quartz tube, heating, passing argon gas along with carbon tetrachloride steam and reacting to obtain double-layered carbon film, placing carbon face on the copper film, annealing, reconstructing and removing copper film. USE - The graphene is useful for sealing gas and liquid. ADVANTAGE - The graphene has large area, smooth surface, good continuity and low porosity. DETAILED DESCRIPTION - Preparing graphene based on copper film auxiliary annealing, comprises (i) cleaning 4-12 inch silicon substrate by standard; (ii) placing the cleaned silicon substrate in a chemical vapor deposition (CVD) system reaction chamber, vacuumizing the reaction chamber to reach 10-7 mbar grade; (iii) gradually heating to the carbonizing temperature of 900-1100 degrees C in presence of hydrogen protection, charging propane with a flow rate of 40 ml/minute, carbonizing the substrate for 3-8 minutes to obtain a carbonizing layer; (iv) rapidly raising temperature to 1100-1250 degrees C, charging propane and silane to perform the growth of 3C-silicon carbide heteroepitaxial films, where the time is 35-70 minutes, gradually reducing the temperature to room temperature in presence of Tween (RTM: Polysorbate) to obtain the complete 3C-silicon carbide heterogeneous heteroepitaxial film; (v) placing the 3C-silicon carbide heteroepitaxial film in a quartz tube and heating at 800-1000 degrees C; (vi) heating a three-opening flask packed containing carbon tetrachloride liquid at 60-80 degrees C, passing argon gas along with carbon tetrachloride steam into the quartz tube with 3C-silicon carbide and reacting to obtain a double-layered carbon film, where the argon gas flow rate is 30-85 ml/minute and the reaction time is 30-120 minutes; (vii) placing the carbon face of the double-layer carbon film sample on the copper film, placing them in the argon gas together and annealing at 900-1100 degrees C for 10-25 minutes, reconstructing the double-layer carbon film to obtain double-layer graphene and removing the copper film from the double-layer graphene.