▎ 摘　　要

NOVELTY - The method involves obtaining a substrate. A negative type or positive type graphene layer is formed on the substrate. A grid region is formed on the graphene layer. A grid region is provided with a metal electrode. An inter-layer is formed on the graphene layer. A contact plug is fixed to the graphene layer. The contact plug is provided with a nano level catalytic metal particle and a carbon nano transistor. A curing agent layer is formed between the nano level catalytic metal particle and the carbon nano transistor. A contact hole is formed in the graphene layer. USE - Method for manufacturing a graphene device (claimed). DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene device manufacturing method. '(Drawing includes non-English language text)'