▎ 摘　　要

NOVELTY - UV light detection device comprises a graphene quantum dot-zinc oxide semiconductor thin film formed on a substrate, and a zinc oxide semiconductor thin film formed on a substrate. The UV light detection device further comprises a polybisbutylphenyl-bisphenylbenzidine (polyTPD) thin film formed on the graphene quantum dot-zinc oxide semiconductor thin film; a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) thin film formed on the graphene quantum dot-zinc oxide semiconductor thin film; a polybisbutylphenyl-bisphenylbenzidine (polyTPD) thin film formed on the zinc oxide semiconductor thin film; conductive layer formed on polyTPD thin film; a conductive layer formed on the polyTPD thin film; a conductive layer formed on PEDOT:PSS thin film. The graphene quantum dot-zinc oxide semiconductor thin film is an n-type inorganic semiconductor. The zinc oxide semiconductor thin film is an n-type inorganic semiconductor. USE - Used as UV light detection device. ADVANTAGE - The UV light detection device has simple and economical manufacturing method capable of producing pn junction detection device in a large area inexpensively through a solution process; has band gap in the UV-visible ray region, thus is suitable for efficiently detecting UV rays, high responsiveness, low noise, high photoselectivity, and repeatability; and is easy to manufacture in a large area through a simple, fast and low-cost solution process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for manufacturing UV light detection device.