▎ 摘　　要

NOVELTY - The utility model claims a gallium nitride film and graphene film, the gallium nitride film comprising a semiconductor substrate, a gallium nitride buffer layer is formed on the semiconductor substrate; the surface of the gallium nitride buffer layer of gallium nitride buffer layer is orderly formed with a first pore structure of graphene catalysis layer and a second pore structures of the graphene mask layer, the first pore structure and the second hole have the same structure, graphene on the surface of the film layer and pores of the graphene exposed in the mask layer is epitaxially grown on a gallium nitride layer. In the embodiment of the utility model, growing gallium nitride layer as mask epitaxial graphene mask layer with pore structure, low angle grain boundary defects can effectively reduce dislocation density of growing gallium nitride film on a semiconductor substrate, effectively reduce the gallium nitride epitaxial graphene layer and mask layer contact part, so that the formed gallium nitride film can be evenly distributed and has good crystal phase structure.