▎ 摘　　要

NOVELTY - The method involves placing (S10) a substrate and a carbon-containing target material in a chamber for pre-preparing graphene. The substrate and the carbon target material are arranged opposite to each other at a predetermined distance. The gas is fed in (S20). The carbon-containing gas and inert gas with a flow ratio are continuously fed into the chamber. The closed magnetic field parallel to the surface of the carbon target is applied (S30) when the internal environmental condition of the chamber reaches a preset condition. The electric field perpendicular to the target surface and the substrate is applied to form a graphene film on the substrate. USE - Method for preparing graphene. ADVANTAGE - The continuity of the prepared graphene film can be improved, the specific surface area of the graphene film can be increased, and the quality of the prepared graphene film can be improved. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a device for preparing graphene film; and (2) a device for production of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for preparing graphene. (Drawing includes non-English language text) Step for placing substrate and carbon-containing target material in chamber for pre-preparing graphene (S10) Step for feeding in gas (S20) Step for applying closed magnetic field parallel to surface of carbon target when internal environmental condition of chamber reaches preset condition (S30)