▎ 摘　　要

NOVELTY - Insulating substrate involves using graphene, which is directly grown on an insulating substrate which has graphene growth catalysis by chemical vapor deposition. The mechanism of direct growth of graphene is layer of copper film is deposited on the insulating substrate, and then a layer of graphene is grown on the copper film by the chemical vapor deposition (CVD). The copper is evaporated by high temperature annealing and the graphene on the insulating substrate, to achieve the purpose of direct growth. The graphite growth mechanism of graphene on the basis of direct growth. USE - Method for insulating substrate for patterning and directly growing graphene (claimed). ADVANTAGE - The method enables to insulate substrate, which has large scale mass production of graphene, and is process in simple and cost-effective manner. DETAILED DESCRIPTION - Insulating substrate involves using graphene (1), which is directly grown on an insulating substrate which has graphene growth catalysis by chemical vapor deposition. The mechanism of direct growth of graphene is layer of copper film (2) is deposited on the insulating substrate, and then a layer of graphene is grown on the copper film by the chemical vapor deposition (CVD). The copper is evaporated by high temperature annealing and the graphene on the insulating substrate, to achieve the purpose of direct growth. The graphite growth mechanism of graphene on the basis of direct growth, the first through the photolithography process to change the shape of copper, and copper film on the growth of graphene also has the same shape with the copper film to get the direct growth of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of insulated substrate. Graphene (1) Copper film (2)