▎ 摘　　要

NOVELTY - The transistor has a graphene-containing barrier layer formed on a channel layer. A source electrode and a drain electrode are arranged on the graphene-containing barrier layer and made of basic material. The channel layer is made of oxide semiconductor material that is selected from one among zinc indium oxide, zinc oxide, indium gallium oxide and cadmium zinc oxide material. The basic material is selected form one among gold, silver, aluminum, copper and zinc materials. A top gate electrode is arranged on an insulating layer that is formed on the channel layer. USE - Thin film transistor for use in a 3D LCD and an AMOLED screen display. ADVANTAGE - The transistor can prevent formation of an oxide layer in an aluminum-indium gallium zinc oxide interface by inserting the graphene-containing barrier layer between the channel layer and a metal electrode. The transistor provides stable ohmic conduct of the aluminum-indium gallium zinc oxide channel during high temperature annealing period. The transistor improves performance of an AMOLED screen display and a 3D LCD by using high conductivity metal in the aluminum-indium gallium zinc oxide interface. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a thin film transistor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a thin film transistor.