▎ 摘　　要

NOVELTY - Manufacturing light emitting element, comprises preparing a lower panel comprising a substrate and a first sub semiconductor layer on the substrate, forming a first mask layer comprising at least one mask pattern on the lower panel and spaced apart from each other, and an opening region in which the mask patterns are spaced apart from each other, forming an element laminate on the first mask layer, comprising laminating a first conductive semiconductor layer, an active material layer, and a second conductive semiconductor layer, forming many element rods by etching the element laminate in a vertical direction to the lower panel, and removing the mask pattern to separate the plurality of element rods from the lower panel, where the many element rods include a first element rod formed on the mask pattern and a second element rod formed on the opening region, and in the removing the mask pattern, the first element rod is separated from the lower panel. USE - The method is useful for manufacturing light emitting element. ADVANTAGE - The light emitting element: has smooth separation surface from the substrate, surface roughness of 8 nm Ra to 12 nm Ra, cylindrical shape, cube shape, rectangular parallelepiped shape, and hexagonal column shape, length of 1-10 mum or 2-5 mum, and diameter of 400-700 nm; and emits light of different wavelengths, and emits light of blue, green, and red wavelengths. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the light emitting element. Light emitting element (300) First semiconductor layer (310) Second semiconductor layer (320) Active layer (350) Insulating layer (380)