▎ 摘　　要

NOVELTY - Asymmetrical oxygen and sulfur channels with a planar structure are grown layer-by-layer to achieve AB-stacked double-layer graphene, by (1) growing single-layer graphene film on both surfaces of copper foil and covering with protective layer on one side of copper foil; (2) engraving other side of copper foil with plasma to etch away single-layer graphene film and oxidize copper to form oxygen-rich surface of cuprous oxide, where top-down structure is single-layer graphene film/copper/cuprous oxide, or thermally depositing layer of sulfur to form sulfur-rich surface, where top-down structure is single-layer graphene film/copper/sulfur; and (3) continuing to use chemical vapor deposition on surface of growth substrate, pyrolyzing gaseous carbon source to generate carbon atoms, diffusing in solid copper, and transferring to single-layer graphene film, where 2nd layer of graphene is precipitated by AB stacking method, and AB-stacked double-layer graphene film is finally formed. USE - A layer-by-layer growth method for asymmetrical oxygen and sulfur channels with a planar structure to achieve AB-stacked double-layer graphene. ADVANTAGE - The method is controlled step by step, the operation is simple, and the repeatability is good, which is conducive to large-scale promotion. The coverage of the prepared double-layer graphene film reaches 95%, and the ratio of the AB stacking method reaches 99%. DETAILED DESCRIPTION - Asymmetrical oxygen and sulfur channels with a planar structure are grown layer-by-layer to achieve AB-stacked double-layer graphene, by (1) growing single-layer graphene film on both surfaces of electrochemically polished copper foil by chemical vapor deposition, and covering with protective layer on one side of copper foil; (2) engraving other side of copper foil with plasma using low-pressure normal-temperature air plasma technology to etch away single-layer graphene film and oxidize copper on this side to form oxygen-rich surface of cuprous oxide, where top-down structure is single-layer graphene film/copper/cuprous oxide, or thermally depositing layer of sulfur using hydrogen plasma technology after reducing oxygen-rich copper surface to form sulfur-rich surface, where top-down structure is single-layer graphene film/copper/sulfur, obtaining a planar structure containing asymmetric oxygen or sulfur channel growth substrate; and (3) continuing to use chemical vapor deposition on oxygen-rich or sulfur-rich surface of growth substrate, pyrolyzing gaseous carbon source to generate carbon atoms, diffusing carbon atoms in solid copper, and transferring to single-layer graphene film, where 2nd layer of graphene is precipitated by AB stacking method, and AB-stacked double-layer graphene film is finally formed.