▎ 摘　　要

NOVELTY - Forming a graphene device comprises: patterning a substrate to form many elements (104-1) and many trenches (106-1) or ridges on the substrate, where each respective element has a top surface (204-1); segmentedly overlaying a carbon source and an initiating material onto the top surface of each element, to form a respective initiating layer on each top surface in the elements, thus forming many initiating layers; and separating the initiating material substantially entirely from the carbon source, to form a graphene stack on the top surface of each element in the elements. USE - The method is useful for forming a graphene device which is useful for fabricating an electronic device (all claimed). ADVANTAGE - The method: is reliable; and provides more graphene stacks with a highly predictable and controllable thickness, at the bottom of elements having a negative polarity. DETAILED DESCRIPTION - Forming a graphene device comprises: patterning a substrate to form many elements (104-1) and many trenches (106-1) or ridges on the substrate, where each respective element in the elements is separated from an adjacent element by a corresponding trench or ridge in the trenches or ridges and each respective element has a top surface (204-1); segmentedly overlaying a carbon source and an initiating material onto the top surface of each element, to form a respective initiating layer on each top surface in the elements, thus forming many initiating layers, where the initiating material is other than carbon and each respective initiating layer in the tops layers is characterized by a first thickness and overlays the top surface of a corresponding element in the elements; and separating the initiating material substantially entirely from the carbon source in at least a portion of each respective initiating layer in the elements to form a graphene stack on the top surface of each element in the elements, thus forming many graphene stacks. Each graphene stack in the graphene stacks is characterized by a second thickness that is self-limiting. DESCRIPTION OF DRAWING(S) - The figure illustrates a cross-sectional view of the graphene device. Elements (104-1) Trenches (106-1) Top surface of element (204-1) Trench surface (206-1) Side wall (208-1)