• 专利标题:   Graphene magnetic tunnel junction magnetic field sensor, has magnetic tunnel junction magnetic-sensitive element provided with orderly stacked substrate that is composed of buffer layers, top electrode layer and pinned ferromagnetic layers.
  • 专利号:   CN103323796-A, CN103323796-B
  • 发明人:   HU J, TIAN W, ZHAO J, PAN M
  • 专利权人:   UNIV NAT DEFENSE TECHNOLOGY
  • 国际专利分类:   G01R033/09
  • 专利详细信息:   CN103323796-A 25 Sep 2013 G01R-033/09 201378 Pages: 8 Chinese
  • 申请详细信息:   CN103323796-A CN10247035 21 Jun 2013
  • 优先权号:   CN10247035

▎ 摘  要

NOVELTY - The sensor has four magnetic tunnel junction (MTJ) magnetic-sensitive elements forming a wheatstone measuring bridge. Two of the MTJ magnetic sensitive elements are located in a gap between two magnetic force line collectors. Other two of the MTJ magnetic-sensitive elements are respectively located at bottoms of two magnetic lines of a force concentrator. The MTJ magnetic-sensitive elements are provided with an orderly stacked substrate that is composed of top and bottom electrode layers, two buffer layers, free and pinned ferromagnetic layers, a graphite barrier layer and a pinned layer. USE - Graphene MTJ magnetic field sensor. ADVANTAGE - The sensor is simple and compact in structure and convenient to manufacture, and occupies less space, and has reduced production cost. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a graphene MTJ magnetic field sensor. '(Drawing includes non-English language text)'