▎ 摘　　要

NOVELTY - Preparing metal single atom-graphene composite material involves taking the hydrogen-rich graphene as carrier, using dipping-roasting method, the metal single atom is embedded in the graphene crystal lattice, obtaining metal single-atom-graphene composite material, the metal single atom-graphene composite material, which has the following composition and preparation process. The carrier of the material contains a lot of point vacancy defects, the sheet structure is complete hydrogen-rich graphene. The metal component loaded by the material is one or more of iron, cobalt, nickel, molybdenum, copper transition metal and platinum, palladium, ruthenium, rhodium, silver noble metal component. The catalyst is prepared by dipping-roasting method, which involves stirring and mixing concentrated sulphuric acid and sodium nitrate under ice bath, adding graphite powder. USE - Method for preparing metal single atom-graphene composite material. ADVANTAGE - The method enables to prepare metal single atom-graphene composite material with good stability and high industrial application value. DETAILED DESCRIPTION - Preparing metal single atom-graphene composite material involves taking the hydrogen-rich graphene as carrier, using dipping-roasting method, the metal single atom is embedded in the graphene crystal lattice, obtaining metal single-atom-graphene composite material, the metal single atom-graphene composite material, which has the following composition and preparation process. The carrier of the material contains a lot of point vacancy defects, the sheet structure is complete hydrogen-rich graphene. The metal component loaded by the material is one or more of iron, cobalt, nickel, molybdenum, copper transition metal and platinum, palladium, ruthenium, rhodium, silver noble metal component. The catalyst is prepared by dipping-roasting method, which involves stirring and mixing concentrated sulphuric acid and sodium nitrate under ice bath, adding graphite powder, then adding potassium permanganate, the mixed system orderly passes through low temperature, middle temperature, taking out after high temperature reaction, adding de-ionized water and hydrogen peroxide, stirring and standing, slowly etching reaction at room temperature, then washing, reducing to obtain the hydrogen-rich graphene, dissolving salt with mixed solution of water and organic solvent, preparing salt solution, firstly wetting the hydrogen-rich graphene by organic solvent volatile gas, then adding into the salt solution for dipping 1-3h, drying, roasting the powder sample at constant temperature of 500degrees Celsius to obtain the metal single atom-graphene composite material.