• 专利标题:   Method for performing anisotropic etching of graphene, involves cutting graphene and patterning graphene, to form zigzag edge.
  • 专利号:   CN101996853-A, CN101996853-B
  • 发明人:   WANG Y, YANG R, ZHANG G, SHI D, ZHANG L
  • 专利权人:   CHINESE ACAD SCI PHYSICS INST
  • 国际专利分类:   B82B003/00, H01L021/00, H01L021/3065
  • 专利详细信息:   CN101996853-A 30 Mar 2011 H01L-021/00 201133 Pages: 6 Chinese
  • 申请详细信息:   CN101996853-A CN10091395 19 Aug 2009
  • 优先权号:   CN10091395

▎ 摘  要

NOVELTY - The method involves cutting the graphene and patterning the graphene. The anisotropic etching is performed on the surface of the graphene, using the hydrogenous plasma. Multiple regular hexagonal holes are formed on the surface of graphite or graphene. The directions of hexagonal holes and crystal of graphene are matched. The edge of the graphene is formed in zigzag structure. USE - Method for performing anisotropic etching of graphite or graphene. ADVANTAGE - The cutting and patterning of graphene can be controlled, by simplified technique, so that zigzag edge of the graphene can be obtained. DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart illustrating the process of performing anisotropic etching of graphite. (Drawing includes non-English language text)