• 专利标题:   Graphene conductive structure constructing method, involves arranging graphene films and isolation films with each other, and forming graphene conductive structure on graphene internal/external film to form inner/outer layer.
  • 专利号:   CN110232989-A
  • 发明人:   WANG F, DAI X
  • 专利权人:   WANG F, DAI X
  • 国际专利分类:   H01B013/00, H01B013/30, H01B005/00, H01B005/14
  • 专利详细信息:   CN110232989-A 13 Sep 2019 H01B-005/00 201977 Pages: 8 Chinese
  • 申请详细信息:   CN110232989-A CN10463250 30 May 2019
  • 优先权号:   CN10463250

▎ 摘  要

NOVELTY - The method involves forming a substrate layer (S1). Graphene solution is prepared (S2). Isolation solution is prepared (S3). The graphene solution is filled (S4) with a substrate inner/outer layer. The isolation solution is coated (S5) on a graphene internal/external film. The graphene solution is coated (S6) on an isolation internal/external film. The isolation solution is coated (S7) on a graphene internal/external film. Separated solution is dried. Multiple graphene films and multiple isolation films are arranged with each other. A graphene conductive structure is formed on the graphene internal/external film. A base material inner/outer layer is formed (S8). USE - Graphene conductive structure constructing method. ADVANTAGE - The method enables creatively designing a structure of an anchor hole by a graphene film so as to arrange an isolating film on the graphene film. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene conductive structure constructing method. '(Drawing includes non-English language text)' Step for forming substrate layer (S1) Step for preparing graphene solution (S2) Step for preparing isolation solution (S3) Step for filling graphene solution with substrate inner/outer layer (S4) Step for coating isolation solution on graphene internal/external film (S5) Step for coating graphene solution on isolation internal/external film (S6) Step for coating graphene conductive structure on graphene internal/external film (S7) Step for forming base material inner/outer layer (S8)