• 专利标题:   Graphene pressure sensor has cavity processed on polydimethylsiloxane substrate, main electrode pair and auxiliary electrode pair arranged on polydimethylsiloxane substrate and respectively located on two sides of cavity.
  • 专利号:   CN111537116-A
  • 发明人:   ZHAO L, LI Z, LUO G, LI L, LUO Y, YANG P, LU D, WANG Y, WANG J, JIANG Z
  • 专利权人:   UNIV XIAN JIAOTONG
  • 国际专利分类:   B82Y040/00, G01L001/18
  • 专利详细信息:   CN111537116-A 14 Aug 2020 G01L-001/18 202070 Pages: 10 Chinese
  • 申请详细信息:   CN111537116-A CN10383731 08 May 2020
  • 优先权号:   CN10383731

▎ 摘  要

NOVELTY - Graphene pressure sensor comprises a cavity is processed on a polydimethylsiloxane substrate (1). A main electrode pair (2) and an auxiliary electrode pair (3) are arranged on the polydimethylsiloxane substrate and are respectively located on two sides of the cavity. The main electrode pair and the auxiliary electrode pair are both provided with leads. A graphene film (4) covers the cavity and the leads of the main electrode pair and the auxiliary electrode pair. The graphene film is tensioned by the recovery potential energy of the polydimethylsiloxane substrate. The cavity is formed by a reverse mode on the silicon chip. USE - Used as graphene pressure sensor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the graphene pressure sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the graphene pressure sensor. Polydimethylsiloxane substrate (1) Main electrode pair (2) Auxiliary electrode pair (3) Graphene film (4)