▎ 摘　　要

NOVELTY - Manufacture of graphene flash memory involves forming conductive layer on semiconductor substrate, patterning conductive layer to form strip, forming source/drain contact electrodes, forming dielectric layer (a) on drain contact electrode, exposing the substrate, forming a graphene layer on the dielectric layer (a), patterning graphene layer to form a strip, forming dielectric layer (b) between graphene layer and dielectric layer (b), forming gate electrode on dielectric layer (b), and etching the dielectric layers (a) and (b) to expose the source/drain contact electrodes. USE - Manufacture of graphene flash memory (claimed). ADVANTAGE - The method enables simple and efficient manufacture of graphene flash memory with reduced power consumption during rapid writing, erasing and reading function. DETAILED DESCRIPTION - Manufacture of graphene flash memory involves providing a semiconductor substrate, forming a conductive layer on the semiconductor substrate, patterning the conductive layer to form a strip, forming source electrode and drain contact electrode at both ends of the conductive layer, forming dielectric layer (a) on drain contact electrode, exposing the semiconductor substrate, forming a graphene layer on the dielectric layer (a), patterning graphene layer to form a strip, providing the graphene layer between the source electrode and the drain contact electrode, forming dielectric layer (b) between graphene layer and dielectric layer (b), forming gate electrode on dielectric layer (b), and etching the dielectric layers (a) and (b) to expose the source/drain contact electrodes.