▎ 摘　　要

NOVELTY - Preparation of structured graphene based copper (Cu) film annealing on silicon carbide (SiC) substrate includes cleaning SiC wafer; depositing a layer of silicon dioxide (SiO2) on the surface of SiC wafer; scribing graphics window on SiO2; putting the windowed wafer in quartz tube; reacting carbon tetrachloride (CCl4) with naked SiC to produce double-layer carbon film; putting the produced double-layer carbon film sample wafer in buffered hydrofluoric acid solution to remove SiO2, which is outside of the window; putting the sample wafer on Cu film; putting in argon; and annealing. USE - Preparation of structured graphene i.e. double-layer structured graphene (claimed) used for making microelectronic devices. ADVANTAGE - The method is simple; has high safety; and provides double-layer structured graphene having smooth surface, good continuity, and low porosity. DETAILED DESCRIPTION - Preparation of structured graphene based Cu film annealing on SiC substrate comprises: (A) cleaning SiC sample wafer to remove the surface pollutant; (B) depositing a layer of SiO2 having 0.4-1.2 mu m thickness by plasma enhanced chemical vapor deposition (PECVD) on the surface of cleaned SiC sample wafer with plasma as the mask; (C) coating a layer of photoresist on the surface of the mask; scribing a window, which is of the same shape of desired device substrate, on the mask; exposing SiC; and forming structured graphics; (D) putting the windowed sample wafer in a quartz tube; connecting well with each device; and heating the quartz tube at 800-1000 degrees C; (E) heating a flask with three-opening loaded with CCl4 liquid at 60-80 degrees C; charging argon to the flask with three-opening; making the CCl4 steam enter into the quartz tube with argon to make the CCl4 react with naked SiC for 30-120 minutes; and producing the double-layer carbon film; (F) putting the produced double-layer carbon film sample wafer in buffered hydrofluoric acid solution to remove SiO2, which is outside of the window; and (G) putting the sample wafer, on Cu film and putting in argon together; annealing for 15-25 minutes at 900-1100 degrees C; making the double-layer carbon film constitute the double-layer structured graphene at the window; and taking out the Cu film from the sample wafer of the double-layer structured graphene.