▎ 摘　　要

NOVELTY - Compounds with quantum interference effects having linear formula A or formula B. USE - Compound with quantum interference effect for vertical single-molecule FET integrated device. ADVANTAGE - The vertical monomolecular heterojunction integrated device is regulated and controlled by solid grid working stably at room temperature, and has super-flat gold electrode. DETAILED DESCRIPTION - Compounds with quantum interference effects having linear formula A or formula B, in which formula A is R2 R1 R2 SH, and formula B is AR2 R1 R2 SnMe3. R1=formula (I)-(V); and R2=biphenyl of formula (VI) and benzene ring triple bond of formula (VII). .. INDEPENDENT CLAIMS are included for following: (1) a vertical single-molecule field effect transistor integrated device containing quantum interference effect compound, is consists of molybdenum disulfide template strip (1), ultra-flat gold electrode strip (2), h-BN insulating support nanopore array (3), self-assembled mono molecule with quantum interference effect (4), graphene drain electrode strip array (5), Bi2Se O5 dielectric layer (6) and graphene gate electrode strip array (7). It has a cross-plane vertical heterostructure of gate/dielectric layer/graphene drain electrode/single self-assembled molecule/ultra-flat metal electrode. The self-assembled single molecule with quantum interference effect is selected from at least one compound molecule of the compound represented by the formula A or the formula B; and (2) a method for preparing a vertical single-molecule field effect transistor integrated device containing a quantum interference effect compound, which involves two-dimensional laminated assembly. The two-dimensional material as each component of the device has atomic level controllable flatness and thickness with ultra-flat gold source terminal electrode. The distance between the source and drain electrodes can be controlled by the atomic layer and combined with the cross-plane vertical hetero structure, the dielectric layer and the gate electrode layer have no direct contact with the molecules and used nanohole arrays to realize the integration of single-molecule vertical field effect transistors, self-assembled single molecule with quantum interference effect used is a compound with quantum interference effect, the two-dimensional material bismuth oxyselenite ( =21) is used with high dielectric constant as the dielectric layer material, the two-dimensional laminated assembly adopts the van der Waals assembly process in which the material is in contact with the material in the way of van der Waals force. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of vertical single-molecule field effect transistor integrated device. Molybdenum disulfide template strip (1) Ultra-flat gold electrode strip (2) H-BN insulating support nanopore array (3) Self-assembled mono molecule with quantum interference effect (4) Graphene drain electrode strip array (5) Bi2Se O5 dielectric layer (6) Graphene gate electrode strip array (7)