▎ 摘　　要

NOVELTY - Manufacturing semiconductor device involves heating second layer of first unit includes first layer, second layer, and third layer. The first layer includes support layer, second layer includes compound containing carbon and element selected from silicon and metals. The third layer includes semiconductor layer and/or wiring layer. The second layer is located between first layer and third layer. The second unit is obtained. The carbonaceous material layer is formed on surface of the second layer and/or carbonaceous material region is formed inside second layer. The second unit is cleaved from the carbonaceous material layer or carbonaceous material region, and third unit is obtained and included the third layer. USE - Method for manufacturing semiconductor device. ADVANTAGE - The method enables to manufacture semiconductor device that improves adhesion between support layer and underlayer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a support, which comprises first layer includes support layer and second layer providing on the first layer and includes compound containing carbon and element selected from silicon and metals.