▎ 摘　　要

NOVELTY - Semiconductor component comprises component main body. A first corrosion resistant coating (300) is located on the part main body (200), and the surface is provided with hole. The material has first porosity. A second corrosion-resistant coating located on first corrosion-proof coating, and second porosity is provided on the second corrosion resistant coating (400). A conductive heat-conducting material (500) is filled in the pores of the first corrosion resistance coating. The conductive thermal conductivity is less than the conductive conductivity of the material. USE - The semiconductor component is useful in plasma reaction device (claimed) and plasma etching process of process gas e.g. carbon tetrafluoride and oxygen. ADVANTAGE - The thermal shock resistance and residual charge releasing capability of the corrosion resistant coating can be improved. The particle pollution problem caused by different material thermal expansion coefficient and electric arc problem generated by excessive residual charge can be reduced. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: forming coating on part main body surface; and plasma reaction device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the semiconductor component. 200Part main body 300First corrosion resistant coating 400Second corrosion resistant coating 500Conductive heat conducting material