▎ 摘　　要

NOVELTY - Preparing graphene nanometer belt, involves preparing graphene on the substrate, where the graphene is angular bisector of sector or triangle, angle alpha and vertical, argon/hydrogen atmosphere annealing, raising temperature, heating at 700-1100 degrees C, for 30 minutes, naturally cooling to the room temperature, and high temperature annealing to form graphene nano-belt and its array. USE - For preparing grapheme nanometer belt (claimed), for manufacturing graphene transistor array and integrated circuit. ADVANTAGE - The method enables etching the nano scale the width of the graphite nanobelt array, and graphite nano-belt is provided with atom size of the smooth edge and the same chiral. DETAILED DESCRIPTION - Preparing grapheme nanometre belt, involves preparing graphene on the substrate, where the graphene is angular bisector of sector or triangle, angle alpha and vertical, f is the graphite alkene is less than 11 (preferably 0-10) and crystal orientation, and alpha is less than 0-180 degrees , metal nano-particles fixed on the edge close to graphene vertex of angle alpha, L is the distance between the peak particle center to the grapheme angle a, L is greater than the radius of the particle, argon/hydrogen atmosphere annealing, raising temperature, heating at 700-1100 degrees C for 30 minutes, naturally cooling to the room temperature, and high temperature annealing to form graphene nano-belt and its array.