▎ 摘　　要

NOVELTY - The transistor has an active layer comprising two layers of graphene-like two-dimensional semiconductor material e.g. Molybdenum disulfide or Tungsten disulfide. A gate electrode, a gate insulating layer, a source electrode, active layer and a drain electrode are overlapped on a substrate. The source electrode and the drain electrode are located on a same layer and alternately arranged on the active layer. The source electrode and the drain electrode are alternately arranged between the active layer and the gate insulating layer. USE - Thin film transistor for use in an electronic device (claimed). ADVANTAGE - The transistor possesses high electron mobility and better electrical performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a thin film transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of a thin film transistor.